مقاله به زبان انگلیسی و شامل 8 صفحه می باشد. در زیر چکیده این مقاله را مشاهده می کنید:
The paper examines the modeling and simulation of piezoelectric MEMS pressure sensor which is AlGaN/GaN based circular high electron mobility transistor (C-HEMT) structure. Residual stress after manufacturing process is modeled as first. After this step etching of substrate is considered and this step represents the stress state of sensor before its using. Only preliminary harmonic piezoelectric simulation of piezoelectric sensor is performed, where deformed shape of sensor caused by intrinsic stress is considered
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مقاله ای در ارتباط با سنسور فشار MEMS پیزوالکتریک